Detailed Analysis of Buried Oxide Degradation Induced by Hot-Carrier Injection

摘要

The degradations of the SIMOX buried oxide after either front channel stress in p-MOSFETs or back channel stress in n-MOSFETs are analyzed as a function of drain bias and correlated. It is found that this damage may be alleviated and the device lifetime extended over 10 years by scaling the drain bias below 3V.