Fabrication and characterization of INGaN nano-scale dots for bule and green LED applications

摘要

Thin layuers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution tramsission electron microscopy. InGaN deposited on GaN exhibits a Stranski-Krastanov growth mode, incuding 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a {1-102} facet with respoect to (0002) surface. Visible spectral range from UV to green was easily obtaind by changing InGaN quantum well thickness up to 2.3 nm.