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Improving the internal quantum efficiency of green InGaN quantum dots through coupled InGaN/GaN quantum well and quantum dot structure

机译：通过耦合的InGaN / GaN量子阱和量子点结构提高绿色InGaN量子点的内部量子效率

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摘要

The InGaN quantum dot (QD) is promising for use in green light-emitting diodes and laser diodes owing to its small strain and weak quantum-confined Stark effect. However, its small carrier capture cross section still sets a limit to its internal quantum efficiency (IQE). Tunneling-enhanced carrier transfer in a coupled InGaN/GaN quantum well (QW) and quantum dot structure has been studied on the basis of temperature-dependent and time-resolved photoluminescence. It is found that carriers can tunnel from a shallow QW to deep QDs at room temperature. Compared with the conventional single-QD layer, the IQE of the QDs can be enhanced more than two times to about 45%.
机译：InGaN量子点（QD）因其应变小且量子限制的Stark效应弱而有望用于绿色发光二极管和激光二极管。但是，其较小的载流子捕获截面仍然对其内部量子效率（IQE）设置了限制。基于温度依赖性和时间分辨的光致发光，研究了在耦合的InGaN / GaN量子阱（QW）和量子点结构中的隧穿增强的载流子传输。发现载流子可以在室温下从浅量子点隧穿到深量子点。与传统的单QD层相比，QD的IQE可以提高两倍以上，达到约45％。

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  • 来源
    《Applied physics express》 |2015年第9期|094001.1-094001.4|共4页
  • 作者

    Jiadong Yu; Lai Wang; Di Yang; Zhibiao Hao; Yi Luo; Changzheng Sun; Yanjun Han; Bing Xiong; Jian Wang; Hongtao Li;

  • 作者单位

    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China;

    Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China;

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