ZnO作为电子传输层的绿光胶体CdSe量子点LED(QD-LED)的制备与表征

摘要

CdSe/ZnS core-shell QDs (523 nm) were used as emissive layers, poly-TPD as hole-transport layer (HTL) and ZnO as electron-transport layer(ETL). Green-emitting devices based on CdSe QDs were fabricated and characterized. Luminescence of semiconductor nanocrystal quantum dots (QDs) were used as luminescent centers in organic light emitting devices ( OLEDs). By changing the size of QD, this OLED can emit visible to near-infrared spectrum with a narrow full-width at half-maximum (FWHM) of -30 nm. However, the brightness, efficiency, and lifetime of LEDs need to be improved to meet the requirements of commercialization in the near future.%通过调节作为发光层的量子点的尺寸,可以制作出覆盖可见光(380～780 nm)以及近红外光谱的量子点LED (QD-LED),其光谱范围很窄且半高宽可达30 nm.然而量子点LED的寿命、亮度以及效率需要进一步提高才能满足商业化的需求.为了研究QD-LED器件的特性,本文采用523 nm波长的CdSe/ZnS核壳型量子点为发光层、poly-TPD为空穴传输层、ZnO为电子传输层,制备了绿光量子点LED,并表征了器件的特性.