A trial was carried out to fabricate self-assembled InGaN QD structures through periodic interruption growth, which is new method for supplying the source materials in a metal organic chemical vapor deposition (MOCVD) reactor. The growth of InGaN QDs was interrupted periodically by stopping the ammonia gas for selected time periods during periodic interruption growth. The change in surface morphology was investigated during the progress of InGaN QD growth. In addi- tion, the morphological and optical characteristics were compared with respect to the period time of 3 or 5 seconds for growth and interruption. InGaN QDs of 25-35 nm in lateral size were grown on GaN surfaces with a density of approximately 4-15 × 10~(10)cm~(-2). The composition of QDs was estimated to be In_(0.14)Ga_(0.86)N. Periodic interruption growth enables the fabrication of self-assembled InGaN QDs with high density and uniform-size.
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