fabrication method of semiconductor device for growth of self-aligned array of self-assembled quantum dots and current blocking structure

摘要

The present invention relates to, and more particularly the compound semiconductor second relates to a fine structure produced, in more detail is a self-aligned method of growing a spontaneous form quantum dots (self-assembled quantum dots) and the current blocking layer (current blocking structure) of the semiconductor technology, . An object of the present invention is in use as a SK growth method to form a compound semiconductor quantum dot structure, and to ensure uniformity of the quantum dot size and to provide a semiconductor device manufacturing method which facilitates the positioning of the substrate plane. The present invention is an amorphous GaAs layer is grown between a TSL (tilted superlattice) By using the structure limiting the portion to be the InAs quantum dots grown to a size of the quantum dots and uniformly guided the size distribution of the quantum dots and the barrier layer growth during InAs quantum dot array structure the proposed self-aligned growth method that can be used as a current blocking structure. The invention has a technical advantage in that the size distribution to increase the uniformity of the quantum dots in addition to the effect of the quantum dots are arranged, cut-off current is indispensable for the device application of the quantum dot structure, the structure at the same time can be implemented without a separate process.