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Fabrication and primary photoevents in self-assembled nanocomposites based on semiconductor quantum dots and tetrapyrrole chromophores

机译:基于半导体量子点和四吡咯发色团的自组装纳米复合材料的制备和一次光事件

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The directed surface passivation of semiconductor CdSe, 0r CdSe/ZnS quantum dots (QD) by meso-pyridyl substituted porphyrins (H_2P) has been realized via a reversible non-covalent self-assembly interaction of H_2P meso-pyridyl nitrogens with ions of the ZnS shell or Cd atoms of the CdSe core in various solvents at ambient temperature. The formation of "QD-porphyrin" nanoassemblies leads to a QD photoluminescence (PL) quenching (intensity decrease and PL decay shortening) accompanied by a H_2P fluorescence enhancement. The analysis of experimental Foerster resonance energy transfer efficiencies E_(FRET) (FRET) found via acceptor (H_2P) sensibilization and donor (QD) PL quenching shows that E_(FRET) values obtained from fluorescence enhancement are of the order of 6 - 8 % for most QD studied and are thus much smaller as compared to the PL quenching efficiency. With respect to QD PL quenching efficiencies, smaller values of EFRET might be due to different competing reasons: the presence of two independent quenching processes in the nanoassemblies, energy transfer QD → H_2P and photoinduced (electron/hole) charge transfer (CT) or time-dependent QD interface dynamics leading to a noticeable QD PL quenching. The analysis of spectroscopic and kinetic findings reveals that a limited number of "vacancies" accessible for porphyrin attachment is available on the QD surface. Simultaneous presence of porphyrin triads/pentads and QDs in a solution leads to the formation of higly organzed nanoassemblies.
机译:通过H_2P介吡啶氮与ZnS离子的可逆非共价自组装相互作用,实现了介吡啶取代的卟啉(H_2P)对半导体CdSe,0r CdSe / ZnS量子点(QD)的定向表面钝化。在室温下,在各种溶剂中,CdSe核的壳或Cd原子。 “ QD-卟啉”纳米组件的形成导致QD光致发光(PL)猝灭(强度降低和PL衰减缩短),并伴有H_2P荧光增强。通过受体(H_2P)敏化和施主(QD)PL猝灭发现的实验Foerster共振能量转移效率E_(FRET)(FRET)分析表明,从荧光增强获得的E_(FRET)值约为6-8%对于大多数QD进行研究,因此与PL淬灭效率相比要小得多。关于QD PL猝灭效率,EFRET值较小可能是由于不同的竞争原因:纳米组件中存在两个独立的猝灭过程,即能量转移QD→H_2P和光诱导的(电子/空穴)电荷转移(CT)或时间依赖的QD接口动力学导致明显的QD PL猝灭。光谱和动力学发现的分析表明,在QD表面上存在有限数量的“卟啉”附着可利用的“空位”。溶液中同时存在卟啉三单元组/五单元组和QD会导致形成有序的有机纳米组件。

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