Deep trench isolation effect on self-heating and RF performances of SiGeC HBTs

摘要

This paper focuses on the effect of deep trench isolation (DTI) on self-heating and electrical performances of state-of-the-art SiGeC heterojunction bipolar transistors (HBTs). The influence of DTI on the heat dissipation and on the thermal resistance of HBTs is studied both with electrical measurements and simulations. The results show that the DTI has a significant influence on heat dissipation and on the thermal resistance values but only little impact on RF performances.