Modeling and simulation of tunneling current in ultrathin oxide with the presence of oxide/silicon interface traps

摘要

This paper describes a model for the charge tunneling through metal-oxide-semiconductor structures. It includes the tunneling of two-dimensional (2D) electronic gas at the semiconductor/oxide interface and the space charge effects due to the trapped electrons. Trap-assisted tunneling is also considered. The theoretical results are compared to some available experimental data. The theoretical results further predict that there exist of composition spatial fluctuations at the semiconductor-oxide interface.