首页>
外国专利>
Silicon oxidation method for reduction of the charge trap concentration at the silicon-oxide interface
Silicon oxidation method for reduction of the charge trap concentration at the silicon-oxide interface
展开▼
机译:硅氧化方法,用于降低氧化硅界面上的电荷陷阱浓度
展开▼
页面导航
摘要
著录项
相似文献
摘要
Using deuterium oxygen during steam oxidation forms an oxidizing vapor. Since deuterium is chemically similar to hydrogen, the oxidation process takes place normally and the silicon-silicon oxide interface is concurrently saturated with deuterium. Saturating the interface with deuterium reduces the interface trap density thereby reducing channel hot carrier degradation.
展开▼