High-Resolution Characterization of Ultra-Shallow Junctions by Scanning Spreading Resistance Microscopy

摘要

The SSRM in vacuum is proven to have sufficiently high spatial resolution for 2D profiling of ultra-shallow junctions of ~10 nm. An extremely small effective probe radius of 0.5 nm has been shown to be available with our SSRM systems. Halo distribution influence on roll-off characteristics has been directly observed. SSRM has been shown to have great potential for 2D characterization of next-generation CMOS devices and other nanostructures.