High-resolution characterization of ultrashallow junctions by measuring in vacuum with scanning spreading resistance microscopy

摘要

The spatial resolution of scanning spreading resistance microscopy has been limited by using conventional probes when measuring in air. Sufficient electric contact of a probe-sample has been difficult to obtain in air due to the existence of moisture/contamination. Two-dimensional carrier profiling of nanoscale silicon devices is performed in a vacuum with conventional probes, and a high spatial resolution is obtained. Ultrashallow junctions down to 10 nm are measured accurately with high reproducibility. Experimental results show that a good electric contact between probe and sample is important for obtaining high spatial resolution.