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Electrical modeling of quad flat no-lead packages for high-frequency IC applications

机译:用于高频IC应用的四方扁平无铅封装的电气建模

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This paper presents electrical modeling of quad flat no-lead (QFN) packages for high-frequency integrated-circuit (IC) applications. In order to predict effectively the package characteristics, the QFN packages were modeled by three-dimensional electromagnetic numerical simulation according to the physical package structures of the real QFN packages. An analytical method was also used to model the QFN packages and extract the parasitic parameters of the packages, including capacitances, inductances, and resistances. The microwave characteristics of the QFN packages, such as return loss and insertion loss, were studied under open-path and short-path configurations. The S parameters of the QFN packages from the numerical modeling are consistent with those from the analytical modeling at the frequencies up to 15 GHz.
机译:本文介绍了用于高频集成电路(IC)应用的四方扁平无引线(QFN)封装的电气建模。为了有效地预测封装特性,根据实际QFN封装的物理封装结构,通过三维电磁数值模拟对QFN封装进行建模。还使用一种分析方法对QFN封装进行建模,并提取封装的寄生参数,包括电容,电感和电阻。在开放路径和短路径配置下,研究了QFN封装的微波特性,例如回波损耗和插入损耗。数值模型中QFN封装的S参数与高达15 GHz频率处的解析模型中的参数一致。

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