Effects of stress and cracks on the reliability of optoelectronic active components

摘要

An experiment for evaluating stress effects on reliability of optoelectronic active components is developed. Here, we take the bi-directional devices as samples; two groups of devices are tested to Telcordia standards during temperature cycling. The power change of devices is associated with stress release. The output powers of the devices are monitored during the process and the power changes are recorded and analyzed. It shows that different samples have different power changes during the different temperature cycle times and the power changes present certain general trends. Further study shows that the large change of power is associated with the welding cracks.