Effects of Stress and Cracks on the Reliability of Optoelectronic Active Components

摘要

An experiment for evaluating stress effects on reliability of optoelectronic active components is developed. Here take the Bi-Di devices as samples; two groups of devices are tested to Telcordia during temperature cycling. The power change of devices is associated to stress release. The output powers of the devices are monitored during the process and the power changes are recorded and analyzed. It shows that different sample has different power change during the different temperature cycle times and the power changes present certain general trend. Further study unfold that the big change of power has something to do with the welding cracks.