Method for testing crack in optoelectronic component used for dark field illumination, involves classifying detected structure as crack, when detected structure has geometric feature corresponding to predetermined geometry parameters

摘要

The method involves measuring (101) spatially resolved intensity distribution of electromagnetic radiation emitted from the semiconductor layer sequence by one partial surface of the substrate facing away from other surface of the semiconductor layer sequence using a measuring unit (203). The intensity distribution on extrema of same type which forms the coherent structure is analyzed (103) using an analyzer (205). The detected coherent structure is classified (105) as a crack, when the detected structure has a geometric feature corresponding to predetermined geometry parameters. Independent claims are included for the following: (1) device for testing crack in optoelectronic component; and (2) computer program for testing crack in optoelectronic component.