An improved process, metrology and methodology for shallow trench isolation etch

摘要

This paper discusses the development of an improved process for shallow trench isolation (STI) etch, the implementation of scatterometer for metrology and a new methodology for improved STI etch process control and monitoring. Cp/Cpk improvement, reduction in or elimination of process related excursions, higher mean time between clean (MTBC), improved tool availability, improved transistor performance and yield that resulted with the implementation of new process and metrology are reported.