The role of fluorine in suppressing boron diffusion is studied by comparing the diffusion of boron from 5 keV BF/sub 2//sup +/ implants versus 1.1 keV /sup 11/B/sup +/ implants with varying 1.9 keV F/sup +/ implant doses. Prior to B/sup +/, F/sup +/ or BF/sub 2//sup +/ implantation, the surface was amorphized to a depth of 1450 /spl Aring/ using a 70 keV Si/sup +/ 1/spl times/10/sup 15//cm/sup 2/ implant. By implanting the boron, fluorine or BF/sub 2/ into pre-amorphized silicon, the differences in damage are factored out of the experiment. In addition, the pre-amorphizing implant provides a source of silicon interstitials for studying boron transient-enhanced diffusion (TED). Secondary Ion Mass Spectrometry (SIMS) profiles indicate negligible reduction in boron diffusion, even with higher fluorine doses corresponding to F:B ratios展开▼
机译：通过比较5 keV BF / sub 2 // sup + /注入与1.1 keV / sup 11 / B / sup + /注入1.9 keV F / sup +注入的硼扩散，研究了氟在抑制硼扩散中的作用。 /植入剂量。在进行B / sup + /，F / sup + /或BF / sub 2 // sup + /注入之前，使用70 keV Si / sup +/- 1 / spl将表面非晶化至1450 / spl Aring /的深度。次10sup 15 // cm / sup 2 /植入物。通过将硼，氟或BF / sub 2 /注入到预非晶硅中，可以将损伤的差异排除在实验范围之外。另外，预非晶化注入提供了用于研究硼瞬态增强扩散（TED）的硅间隙源。二次离子质谱（SIMS）曲线表明，即使对应于F：B比展开▼
