Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique

摘要

Electrical and optical properties of undoped semi-insulating GaAs grown by the vertical zone melt (VZM) technique and annealed at 950/spl deg/C under As overpressure have been characterized. The 950/spl deg/C annealing significantly improves the uniformity and increases both EL2 concentration and mobility. Cu incorporation into the VZM materials has been observed.