首页> 外国专利> Large single crystal production by the floating zone method uses insulating components or layers to suppress electrical charges between the heating coil and the polycrystalline and grown blocks and the melt zone

Large single crystal production by the floating zone method uses insulating components or layers to suppress electrical charges between the heating coil and the polycrystalline and grown blocks and the melt zone

机译:通过浮区法生产的大型单晶使用绝缘组件或绝缘层来抑制加热线圈与多晶和生长块以及熔融区之间的电荷

摘要

Apparatus for production of single crystals by the floating zone (FZ) method has a chamber containing a crude polycrystalline cast block, a grown single crystal block and an induction heating coil producing the melt zone between the blocks, suppression of electrical charges between the coil and the blocks and melt zone involving placing an insulating component between the coil and the blocks and melt zone and/or placing a layer of insulant onto the coil surface. An independent claim is also included for effecting the growth of the single crystal block using the above insulating component and/or insulant layer.
机译:通过浮区(FZ)方法生产单晶的设备具有一个腔室,该腔室包含一个粗制的多晶铸块,一个生长的单晶块以及一个感应加热线圈,该感应加热线圈在两个块之间形成熔融区,从而抑制了线圈与金属之间的电荷块和熔化区包括在线圈和块和熔化区之间放置绝缘部件和/或在线圈表面上放置一层绝缘剂。还包括独立权利要求,以使用上述绝缘组分和/或绝缘层实现单晶块的生长。

著录项

  • 公开/公告号DE102005060391A1

    专利类型

  • 公开/公告日2006-06-22

    原文格式PDF

  • 申请/专利权人 SHIN-ETSU HANDOTAI CO. LTD.;

    申请/专利号DE20051060391

  • 发明设计人 KODAMA YOSHIHIRO;

    申请日2005-12-16

  • 分类号C30B13/16;C30B29/06;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:08

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号