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Producing a single crystal according to float-zoning method, comprises heating crystalline raw material rod to form floating-zone, moving the floating zone from bottom to top for the growth of a single crystal ingot below the floating zone
Producing a single crystal according to float-zoning method, comprises heating crystalline raw material rod to form floating-zone, moving the floating zone from bottom to top for the growth of a single crystal ingot below the floating zone
Producing a single crystal according to float-zoning (FZ) method, comprises heating a crystalline raw material rod (1) by an induction heating coil (7) to form a floating-zone (10), moving the floating zone from bottom to top for the growth of a single crystal ingot (2) below the floating zone. At least one heat-insulating cylinder, which is used to maintain the temperature of the crystalline raw material rod is placed around the crystalline raw material rod, which is located at the top side of the floating-zone, during growth of the single crystal ingot. An independent claim is also included for a device (15) for producing the single crystal according to the FZ method, comprising at least a chamber for receiving a crystal raw material rod, a growing single crystal ingot and an induction heating coil, which serves as a heat source to form the floating zone between the crystalline raw material rod and the growing single crystal ingot.
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