首页> 外国专利> Producing a single crystal according to float-zoning method, comprises heating crystalline raw material rod to form floating-zone, moving the floating zone from bottom to top for the growth of a single crystal ingot below the floating zone

Producing a single crystal according to float-zoning method, comprises heating crystalline raw material rod to form floating-zone, moving the floating zone from bottom to top for the growth of a single crystal ingot below the floating zone

机译:根据浮带法生产单晶,包括加热晶体原料棒形成浮带,将浮带从底部移动到顶部,以使单晶锭生长在浮带下方。

摘要

Producing a single crystal according to float-zoning (FZ) method, comprises heating a crystalline raw material rod (1) by an induction heating coil (7) to form a floating-zone (10), moving the floating zone from bottom to top for the growth of a single crystal ingot (2) below the floating zone. At least one heat-insulating cylinder, which is used to maintain the temperature of the crystalline raw material rod is placed around the crystalline raw material rod, which is located at the top side of the floating-zone, during growth of the single crystal ingot. An independent claim is also included for a device (15) for producing the single crystal according to the FZ method, comprising at least a chamber for receiving a crystal raw material rod, a growing single crystal ingot and an induction heating coil, which serves as a heat source to form the floating zone between the crystalline raw material rod and the growing single crystal ingot.
机译:根据浮带法(FZ)生产单晶,包括通过感应加热线圈(7)加热晶体原料棒(1)以形成浮区(10),使浮区从下到上移动用于在浮动区下方生长单晶锭(2)。在单晶锭的生长过程中,至少一个用于保持晶体原料棒温度的绝热筒被放置在位于浮区顶侧的晶体原料棒周围。 。还包括根据FZ方法生产单晶的装置(15)的独立权利要求,其至少包括用于容纳晶体原料棒的室,生长的单晶锭和感应加热线圈,其用作热源在晶体原料棒和生长的单晶锭之间形成浮动区。

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