Electrical Properties of Semi-insulating GaAs Grown from the Melt Under Microgravity Conditions

摘要

A technologically important undoped semi-insulating(SI)GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously.The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity.