Modeling of TED of boron in the underlying silicon layer due to boron implantation

摘要

Ion implantation's high selectivity played a very important role in forming active device region and low resistance ohmic contact for bipolar and CMOS transistors. However the process of annealing for dopant activation and repair, problems related to anomalous transient enhanced diffusion (TED) negate the benefits of ion implantation. The irregular dopant diffusion makes the realization of sharp and shallow junction devices difficult. It is therefore very important to model the TED in relation to the implantation energy before any realistic design of the transistor can be made. In this work, both experimental result from special structures with different implantation energies and process simulator SILVACO SILVACO is studied and used to model TED.