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Energy level consideration of source/channel/drain for performance enhancements of N- and P-channel organic FETs

机译:考虑源/沟道/漏极的能级,以增强N和P沟道有机FET的性能

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This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a better OFET performance
机译:本文讨论了为两个通道实现更好的FET性能的可能方法,以及通道类型的确定机制。我们研究了全氟戊烯(C 22 F 14 )(PF-并五苯)的n通道和并五苯(C 22 F 14 < / sub>)用于p沟道FET。基于通道材料和S / D金属的能级考虑,我们显示了实现更好的OFET性能的系统指南

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