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Semiconductor device including n-channel fets and p-channel fets with improved drain current characteristics
Semiconductor device including n-channel fets and p-channel fets with improved drain current characteristics
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机译:包括具有改善的漏极电流特性的n沟道FET和p沟道FET的半导体器件
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摘要
In a semiconductor device including n-channel field-effect transistors and p-channel field-effect transistors, in which the channel direction is parallel to a axis, a semiconductor device in provided which has excellent drain current characteristics at both n-channel field-effect transistors and p-channel field-effect transistors. In a semiconductor device including n-channel field-effect transistors N1 and N2 and p-channel field-effect transistors P1 and P2, a stress control film that covers the gate electrodes of the n-channel and p-channel field-effect transistors from upper surfaces thereof is not formed, or is made thin, above shallow trench isolations adjacent to active regions formed by the p-channel field-effect transistors P1 and P2, in a case where the stress control film is a tensile film stress. Thus, improvement of the drain currents of both the n-channel and p-channel transistors can be expected. For this reason, it is possible to improve overall characteristics.
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