Improved lifetime determination of deep submicron n-channel MOSFETs using charge pumping technique and drain current degradation modeling

摘要

Hot carrier induced drain current degradation can be monitored using sensitive charge-pumping measurements, particularly after worst case ageing conditions. This measurement technique permits stress experiments close to normal operating conditions. Using the charge-pumping measurements and simple I-V models, the device lifetime is calculated from low voltage stress experiments. Thus, lifetime prediction is obtained with higher accuracy than with classical methods, which are based on extrapolations from high voltage injections.