A new power MOSFET Structure with a pn junction——Bipolar Junction MOSFET(BJMOSFET) has been proposed.The device has the advantages of both BJT and FET. The numerical model of the I V characteristics of BJMOSFET has been obtained on the basis of both numerical and analytical methods. With the software package of Mathematic, we firstly calculate the gain factor, and then simulate the voltage tranmission,voltage output and voltage transfer’s characteristic graphs of the BJMOSFET. The simulation result indicates that BJMOSFET has the current density, which is about 25% larger than the power MOSFET, under the same operating conditions and with the same structure parameters, except that the threshold voltage increase a little.
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