首页> 外文会议> >Improved reliability characteristics of ultrathin high-k MOSFET with TiN gate by employing two step post deposition annealing process

【24h】

Improved reliability characteristics of ultrathin high-k MOSFET with TiN gate by employing two step post deposition annealing process

机译：采用两步后沉积退火工艺，改善了具有TiN栅极的超薄高k MOSFET的可靠性特性

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

not avaliable

机译：无法使用

著录项

来源
《》|2005年|P.85-86|共2页
会议地点
作者
Rahman; M.S.; Park; H.; Chang; M.; Choi; R.; Lee; B.H.; Lee; J.C.; Hwang; H.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类工业技术;
关键词

相似文献

外文文献
中文文献
专利

1. Improvement of TDDB reliability, characteristics of HfO_2 high-k/metal gate MOSFET device with oxygen post deposition annealing [J] . Chia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Microelectronics reliability . 2010,第5期

机译：氧沉积后退火提高了TDDB的可靠性和HfO_2高k /金属栅MOSFET器件的特性
2. The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing [J] . Wu Y., Lucovsky G. IEEE Transactions on Electron Devices . 2000,第7期

机译：通过远程等离子体增强CVD和沉积后快速热退火制备的具有氮化的Si-SiO / sub 2 /界面的超薄氮化硅/氧化物堆叠栅极电介质的PMOSFET的性能和可靠性
3. Improved Channel Hot-Carrier Reliability in $p$ -FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process [J] . IEEE transactions on device and materials reliability . 2014,第1期

机译：通过氮后沉积退火工艺替换金属栅极，提高了$ p $ -FinFET中的通道热载流子可靠性
4. Improved reliability characteristics of ultrathin high-k MOSFET with TiN gate by employing two step post deposition annealing process [C] . M.S. Rahman, H. Park, M. Chang, . 2005

机译：采用两步后沉积退火工艺，改善了具有TiN栅极的超薄高k MOSFET的可靠性特性
5. Electrical and material characteristics of hafnium-based multi-metal high-k gate dielectrics for future scaled CMOS technology: Physics, reliability, and process development. [D] . Rhee, Se Jong. 2005

机译：基于future的多金属高k栅极电介质的电气和材料特性，可用于未来的规模化CMOS技术：物理，可靠性和工艺开发。
6. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs [O] . H. Hussin, N. Soin, M. F. Bukhori, -1

机译：栅堆叠结构和工艺缺陷对32 nm工艺节点PMOSFET中NBTI可靠性的高k介电依赖性的影响
7. Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing [O] . Esther Lee, Tae Hyeon Kim, Seung Won Lee, 2019

机译：通过在退火后实现具有高K Al2O3栅极电介质的溶胶 - 凝胶IGZO晶体管的电性能

Improved reliability characteristics of ultrathin high-k MOSFET with TiN gate by employing two step post deposition annealing process

摘要

著录项

相似文献

相关主题

期刊订阅