Total dose radiation effects in partially-depleted SOI transistors with ultrathin gate oxide

摘要

In this article, total dose effects on thin gate oxide, partially depleted SOI transistors are presented. The thin gate oxide is minimally affected by the radiation, while trapped holes in the buried oxide suppress the second g/sub m/ peak by reducing the float body volume. Ultrathin tunneling oxides enable GIFBE and render the front channel of partially depleted transistors more sensitive to carrier trapping in the BOX. The devices recover during isochronal annealing, approaching the pre-irradiation characteristics at temperatures near 300 /spl deg/C.