gold; nickel; gallium compounds; magnesium; III-V semiconductors; wide band gap semiconductors; ohmic contacts; semiconductor-metal boundaries; contact resistance; metallic thin films; evaporation; annealing; visible spectra; thermal stability; oxidation; transparency; electrical characteristics; optical characteristics; Au/Ni ohmic contacts; p-GaN; optical transmittance; sheet resistance; specific contact resistance; Au/Ni films; e-beam evaporation; transparent NiO; annealing; light transmittance; oxidation; Mg dopant; thermal stability; blue light regime; 20 nm; 10 min; 300 to 700 degC; Au-Ni-GaN; GaN:Mg;
机译:非合金Ni / Au欧姆接触到激光辐照的p-GaN的电性能
机译:覆盖层厚度对使用欧姆凹进技术的p-AlGaN和p-GaN上的Ni欧姆接触的电性能的影响
机译:Ni-Au基膜与p-GaN的欧姆接触形成时纳米级Au点的存在
机译:Au / Ni欧姆触点的电气和光学特性对P-GaN
机译:快速热退火欧姆触点与砷化镓的比较电特性。
机译:AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌
机译:使用Au / Ni-Zn-O金属化对P-GaN的欧姆接触
机译:砷化镓上的au-Ge-Ni-Ti欧姆接触。