Modeling the I-V characteristics of fully-depleted SOI MOSFETs including self-heating

摘要

Fully-depleted Silicon-On-Insulator (SOI) MOSFETs are a strong potential candidate for future ULSI CMOS applications. In order to evaluate the merits of these devices an accurate model of the output characteristics applicable to sub-half micron channel lengths is needed. Previous work on modeling the I-V (current-voltage) characteristics of thin-film SOI MOSFETs has mainly been based on inaccurate velocity-field relation for carriers in the channel region. Moreover, in most models, conductance and capacitances show discontinuities at the transition points from subthreshold to saturation to linear regions. In this paper we report a physically based continuous analytical model for SOI MOSFETs that is represented by a single drain current equation valid in all regions of device operation ofinterest.