Basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques

摘要

Abstract: An ac surface photovoltage, which is excited by achopped photon beam in a semiconductor, is successfullyapplied for nondestructive detection of metalliccontaminants on silicon wafer surfaces. In this report,the charge-induced phenomena at Si wafer surfaces dueto various impurities and the mechanism are summarized.Metal (trivalent Al and Fe)- induced negative chargeshave been proposed at the top region of thermal oxideon the basis of the generally accepted oxide chargemodel. !38