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Behavior of Metal-Induced Oxide Charge during Thermal Oxidation in Silicon Wafers

机译：硅片热氧化过程中金属诱导氧化物电荷的行为

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Chem In; Chem Out; J. Parker; S. Verhaberke; C. Mcconnel; Hirofumi Shimizu;
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1. Behavior of Metal-Induced Negative Oxide Charges on the Surface of N-type Silicon Wafers Using Frequency-Dependent AC Surface Photovoltage Measurements [J] . Hirofumi Shimizu, Ryuhei Shin, Masanori Ikeda Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第6A期

机译：使用频率相关的交流表面光电压测量，在N型硅晶圆表面上金属诱导的负电荷行为
2. Metal-induced negative oxide charge detected by an alternating current surface photovoltage in thermally oxidized Fe-contaminated n-type Si (001) wafers [J] . Hirofumi Shimizu, Tomohiro Otsuki Thin Solid Films . 2012,第14期

机译：通过交流表面光电压在热氧化的铁污染的n型Si（001）晶片中检测到的金属感应的负电荷
3. Quantitative Estimation of the Metal-Induced Negative Oxide Charge Density in n-Type Silicon Wafers from Measurements of Frequency-Dependent AC Surface Photovoltage [J] . Hirofumi SHIMIZU, Ryuhei SHIN, Masanori IKEDA Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第3A期

机译：通过测量随频率变化的交流表面光电压可定量估算n型硅晶片中金属诱导的负电荷密度
4. Basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques [C] . Author(s): Hirofumi Shimizu Hitachi Ltd. Tokyo Japan, Chusuke Munakata Tohoku Institute of Technology Taihaku-ku Sendai Japan. In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II . 1998

机译：交流表面光电压技术研究硅片表面金属诱导的氧化物电荷的基本方法
5. Thermal stability of strontium iron oxide/silicon dioxide/silicon and strontium iron oxide/aluminum oxide thin film systems: Transmission electron microscopy study of interfacial structures of the thin film systems and conductometric sensing response of strontium iron oxide/aluminum oxide. [D] . Wang, Dashan. 2008

机译：氧化锶铁/二氧化硅/硅和氧化锶铁/氧化铝薄膜系统的热稳定性：透射电子显微镜研究薄膜系统的界面结构和氧化锶铁/氧化铝的电导传感响应。
6. Study on Thermal Decomposition Behaviors of Terpolymers of Carbon Dioxide, Propylene Oxide, and Cyclohexene Oxide [O] . Shaoyun Chen, Min Xiao, Luyi Sun, 1999

机译：二氧化碳，环氧丙烷和环己烯氧化物三元共聚物的热分解行为研究
7. Properties and Reliability of ultra-thin Oxides Grown on Four Inch Diameter Silicon Wafers by Microwave Plasma Afterglow Oxidation [O] . P.C. Chen 2012

机译：微波等离子体余辉氧化在4英寸直径硅晶片上生长的超薄氧化物的性能和可靠性
8. ESR Centers, Interface States, and Oxide Fixed Charge in Thermally Oxidized Silicon Wafers [R] . Caplan, P. J., Poindexter, E. H., Deal, B. E., 1979

机译：EsR中心，界面态和热氧化硅晶片中的氧化物固定电荷

Behavior of Metal-Induced Oxide Charge during Thermal Oxidation in Silicon Wafers

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