Soft X-ray photoelectron spectroscopy study of Boron doped on top surfaces and sidewalls of Si Fin structures

摘要

2D distribution of depth profiling of impurities and their activityon-activity are very important for development of process technology for nano-scale 3D devices. Si Fin structures doped with Boron (B) were evaluated by soft X-ray photoelectron spectroscopy (SXPES) and a feasibility of detecting the difference were demonstrated between the chemical bonding states as well as concentrations of B on top of Fins and those on sidewall of Fins.