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Planar Graphene Edge Field Emitter Design with Improved Emission Current

机译:具有改善的发射电流的平面石墨烯边缘场发射极设计

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We demonstrate field emission from planar graphene edges fabricated using a new method. The device uses narrow cantilevered metal beams to support the graphene. To date we have measured emission currents over 10μA from edges less than 50μm long, three orders of magnitude improvement over previous results. Millikan-Lauritsen plots result in straight lines. The electron energy spectra demonstrate field emission but are sometimes broadened on the low energy side relative to standard field emission theory, suggesting the Fermi energy was shifted by up to several eV along the edge. The cause of the shift may be adsorbed fluorine atoms which reduce the electron density in graphene.
机译:我们演示了使用新方法制造的平面石墨烯边缘的场发射。该设备使用窄悬臂金属梁支撑石墨烯。迄今为止,我们已经测量到长度小于50μm的边缘的发射电流超过10μA,比以前的结果提高了三个数量级。 Millikan-Lauritsen图以直线产生。电子能谱显示了场发射,但相对于标准场发射理论,有时在低能侧变宽,这表明费米能沿边缘最多移动了几个eV。位移的原因可能是吸附的氟原子,该氟原子降低了石墨烯中的电子密度。

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