首页> 外国专利> Field emission device for field emission triode - has convex hollow space in substrate of monocrystalline silicon@ with opening whose side edges form field emitter edges

Field emission device for field emission triode - has convex hollow space in substrate of monocrystalline silicon@ with opening whose side edges form field emitter edges

机译:用于场致发射三极管的场致发射装置-在单晶硅衬底中具有凸形的空心空间@,其开口的侧边缘形成场致发射器边缘

摘要

The field emission device includes a substrate (2) of monocrystalline silicon with a surface from a 100 - crystal face. The substrate has a convex hollow space (3) whose side walls are formed by 111 - crystal faces of the substrate. The hollow space has an opening in the substrate surface, whose side edges are formed by tracing 111 - crystal faces on the surface. The side edges of the opening form field emitter edges (4), e.g. for the field emission cathode. A block (10) of insulating material is formed on the floor of the hollow and an electrically conducting layer (6), e.g. forming an extraction grid, is applied to the block. A second conducting layer (8), e.g. forming the anode, is provided on spacing blocks (12) above the substrate. ADVANTAGE - Can be produced in simple, controlled and reproducible process.
机译:场发射器件包括单晶硅衬底(2),该单晶硅衬底的表面从<100>晶面开始。基板具有凸状的中空空间(3),其侧壁由基板的<111>-晶体面形成。中空空间在基板表面上具有开口,该开口的侧边缘通过在表面上追踪<111>-晶体面而形成。开口的侧边缘形成场发射器边缘(4),例如。用于场发射阴极。绝缘材料的块(10)形成在中空的地板上,并且导电层(6)例如是绝缘层。形成提取网格的方法应用于该块。第二导电层(8),例如,第二导电层(8)。在基板上方的间隔块(12)上提供形成阳极的电极。优势-可以通过简单,可控制和可重复的过程生产。

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