首页> 外文会议>International Symposium on Ultra Clean Processing of Silicon Surfaces(UCPSS); 20060918-20; Antwerp(BE) >Peracetic acid as active species in mixtures for selective etching of SiGe/Si layer systems - Aspects of chemistry and analytics
【24h】

Peracetic acid as active species in mixtures for selective etching of SiGe/Si layer systems - Aspects of chemistry and analytics

机译:过乙酸作为混合物中的活性物质,用于选择性刻蚀SiGe / Si层系统-化学和分析学方面

获取原文
获取原文并翻译 | 示例

摘要

Of the many analytical techniques considered, the UV-Vis method using ABTS and the variation of the classical iodometric titration with catalase have proven their reliability and accuracy. Water withdrawal is effective for both kinetics and equilibrium, temperature (reported in [4]) only affects the reaction rate. An ideal combination of water withdrawal and temperature leads to fast and efficient PAA formation. The etchrates correlate well with PAA conc. Over the entire time of formation, with an 18:1 preference for SiGe over sSOI and high etchrates on SiGe.
机译:在考虑的许多分析技术中,使用ABTS的UV-Vis方法以及使用过氧化氢酶的经典碘量滴定法的变化已证明了其可靠性和准确性。吸水对于动力学和平衡都是有效的,温度(在[4]中报道)仅影响反应速率。取水和温度的理想组合可导致快速有效地形成PAA。蚀刻速率与PAA浓度很好地相关。在整个形成过程中,相对于sSOI,SiGe的比例为18:1,并且SiGe上的蚀刻速率较高。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号