首页> 外文会议>International Symposium on Microelectronics; 20050925-29; Philadelphia,PA(US) >Hermetic Sealing of Microelectronics Packages Using a Room Temperature Soldering Process
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Hermetic Sealing of Microelectronics Packages Using a Room Temperature Soldering Process

机译:使用室温焊接工艺对微电子封装进行气密密封

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This paper describes a process which uses a multilayered reactive foil to hermetically seal microelectronic packages. The foil is comprised of thousands of nanoscale layers of elements with large negative heats of mixing, such as Al and Ni. When the reaction is activated in the foil using a small electrical or thermal stimulus, the heat generated melts the adjoining solder layers and permanently joins the package lid to the base. The seal is achieved without exposing the components to high reflow temperature. RNT has used this process to create a hermetic seal between an Au-plated stainless steel lid and Au-plated stainless steel base. We show that helium leak rates of less than 1 x 10~(-10) atm-cc/sec can be achieved by using this method. This process provides an attractive alternative to more expensive methods such as laser welding and eliminates the need for costly fabrication equipment.
机译:本文介绍了一种使用多层反应性箔来密封微电子封装的工艺。箔片由数千个纳米级元素层组成,这些元素层具有很大的负混合热,例如Al和Ni。当使用小的电刺激或热刺激在箔中激活反应时,所产生的热量会熔化相邻的焊料层,并将封装盖永久性连接至基座。无需将组件暴露在高回流温度下即可实现密封。 RNT已使用此过程在镀金的不锈钢盖和镀金的不锈钢底座之间形成气密密封。我们证明,使用这种方法可以实现小于1 x 10〜(-10)atm-cc / sec的氦气泄漏率。该工艺为更昂贵的方法(如激光焊接)提供了一种有吸引力的替代方法,并且消除了对昂贵的制造设备的需求。

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