首页> 外文会议>International Federation for Heat Treatment and Surface Engineering Congress vol.2; 20041026-28; Shanghai(CN) >Microfabrication and Performance of Annealed NiTi Shape Memory Thin Films by Sputtering for Microdevice Applications
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Microfabrication and Performance of Annealed NiTi Shape Memory Thin Films by Sputtering for Microdevice Applications

机译:用于微器件应用的溅射NiTi形状记忆薄膜的微细加工及其性能

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摘要

The microfabrication and performance NiTi shape memory thin films for microdevice applications were studied by microfabrication processes, which were compatible with those of microelectronics fabrication processes. The sputter-deposition conditions, patterning process, and annealing conditions were investigated. The B2 crystal structures of the thin films can be obtained by annealing at 525℃ for 30min. The results from x-ray photoemission spectroscopy indicated that the atomic concentration in the surface of the annealed thin films with preferred structures is comparable with those of the as-deposited films.
机译:通过与微电子制造工艺兼容的微制造工艺研究了用于微器件应用的微制造和高性能NiTi形状记忆薄膜。研究了溅射沉积条件,构图工艺和退火条件。薄膜的B2晶体结构可以通过在525℃下退火30分钟而获得。 X射线光发射光谱法的结果表明,具有优选结构的退火薄膜表面的原子浓度与沉积后的薄膜相当。

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