首页> 外文会议>International Conference on Micro amp; Nano Systems 2002 (ICMNS 2002) Aug 11-14, 2002 Kunming, China >Fabrication and Characterization of Nickel Titanium Shape memory Thin Films by RF Magnetron Sputtering for MEMS Applications
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Fabrication and Characterization of Nickel Titanium Shape memory Thin Films by RF Magnetron Sputtering for MEMS Applications

机译:射频磁控溅射在MEMS应用中镍钛形状记忆薄膜的制备与表征

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摘要

Nickel titanium shape memory thin films for MEMS applications were sputter-deposited, patterned, etched and released, which were compatible with those of microelectronics fabrication techniques. The detailed sputter-deposition conditions, patterning process, annealing conditions and oxidation prevention were investigated. Crystallization temperature of the as-deposited thin films was determined to be approximately 500℃ by differential thermal analyzer. Structures of the nickel-titanium thin films annealed under different temperatures and annealing time were characterized by x-ray diffraction patterns. The as-deposited nickel titanium thin films can be crystallized under 525℃ for 30 min to 60 min to obtain B2 (CsCl-type) austenite structure, rhombohedral structure, and martensite (monoclinic) structure. The crystallized nickel titanium thin films obtained have very good quality.
机译:溅射沉积,图案化,蚀刻和释放用于MEMS的镍钛形状记忆薄膜,这与微电子制造技术兼容。研究了详细的溅射沉积条件,构图工艺,退火条件和防止氧化。用差热分析仪测定沉积薄膜的结晶温度约为500℃。通过X射线衍射图表征了在不同温度和退火时间下退火的镍钛薄膜的结构。沉积后的镍钛薄膜可以在525℃下结晶30分钟至60分钟,以获得B2(CsCl型)奥氏体结构,菱面体结构和马氏体(单斜晶)结构。得到的结晶的镍钛薄膜质量非常好。

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