Device Physics and Design Theory of Si, Ge and Si_(1-x)Ge_x Vertical Dual Carrier Field Effect Transistor Integrated Circuits on Insulator with Effective Channel Length of 5-18nm

摘要

Device physics and design theory of Si, Ge, and Si_(1-x)Ge_x "Complementary Vertical Dual Carrier Field Effect Transistor" (CVDCFET) integrated circuits on insulator for high speed switching and high frequency mixed signal application are studied and compared. The transistor scaling projections of CVDCFET are presented and compared with the scaling projections of CMOS as given in the 2005 edition of ITRS.