Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

摘要

High-temperature chemical vapour deposition (HTCVD) in a vertical chimney reactor was used to grow thick low-doped epitaxial layers of 4H silicon carbide. These layers were used as drift layers in a combined process to manufacture both bipolar and unipolar high-voltage diodes. The resulting diodes were characterized electrically in order to gain knowledge about the electric quality of the HTCVD epitaxial layers to assess the high-voltage properties of this material.