Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer

摘要

An optical shallow defect analyzer was used to measure the density of defects in thin strained silicon-germanium epitaxial layers. Its sensitivity was sufficient to clarify the difference in the crystallinities of samples cleaned by different surface-cleaning methods. The OSDA showed that the defect density increases with increasing germanium concentration.