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Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(0 0 1) and Si(1 1 1) substrates by ECR-MBE

机译：生长前衬底氮化对ECR-MBE在Si（0 0 1）和Si（1 1 1）衬底上生长的GaN异质外延层初始生长过程的影响

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《International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China》|2000年|431-436|共6页
会议地点 Beijing(CN)
作者
T. Yodo;
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作者单位

H. Ando, H. Tsuchiya, D. Nosei, M. Shimeno, Y. Harada;

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原文格式 PDF
正文语种 eng
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专利

1. Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE [J] . T.Yodo, H.Ando, H.Tsuchiya Journal of Crystal Growth . 2001,第期

机译：生长前衬底氮化对ECR-MBE在Si（001）和Si（111）衬底上生长的GaN异质外延层初始生长过程的影响
2. Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-assisted MBE [J] . T. Yodo, H. Ando, D. Nosei Journal of Crystal Growth . 2002,第期

机译：通过ECR辅助MBE研究在Si（001）和Si（111）衬底上生长的GaN异质外延层的初始生长过程
3. Mutual influence among inert nitrogen molecules, nitrogen radical atoms, nitrogen radical molecules and nitrogen molecular ions on growth process and crystal structure of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by molecular [J] . Tokuo Yodo, Hironori Ando, Diki Nosei Journal of Crystal Growth . 2001,第1a2期

机译：惰性氮分子，氮自由基原子，氮自由基分子和氮分子离子之间的相互影响对通过分子生长在Si（001）和Si（111）衬底上生长的GaN异质外延层的生长过程和晶体结构的影响
4. Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(00 1) and Si(l 1 1) substrates by ECR-MBE [C] . H. An, Y. Harada, M. Shimeno, International conference on molecular beam epitaxy . 2001

机译：通过ECR-MBE在Si（001）和Si（L 1 1）基材上生长的GaN杂轴层初始生长过程中底物氮化的影响
5. Defect structures and growth mechanisms of boron arsenide epilayers grown on 6H-silicon carbide and 15R-silicon carbide substrates. [D] . Chen, Hui. 2008

机译：在6H-碳化硅和15R-碳化硅衬底上生长的砷化硼外延层的缺陷结构和生长机理。
6. Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant [O] . Wen-Yang Hsu, Yuan-Chi Lian, Pei-Yu Wu, 2018

机译：通过基于H3PO4的蚀刻剂修饰微米尺寸的图案化蓝宝石衬底抑制侧壁GaN的初始生长
7. The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate [O] . Arslan, E., Ozturk, M.K., Duygulu Ö., 2009

机译：氮化时间对在Si（111）衬底上生长的GaN的结构性能的影响
8. MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates [R] . Weyher, J. L. 2005

机译：在HpVE生长的模板和自支撑GaN衬底上的N型GaN层的mOCVD生长和蚀刻

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