OPTIMIZATION OF NEAR-SURFICIAL ANNEALING FOR DECREASING OF DEPTH OF P-N-JUNCTION IN SEMICONDUCTOR HETEROSTRUCTURE

摘要

In this paper analysis of dopant redistribution during formation of p-n-junction in semiconductor heterostructure by laser or microwave annealing has been done. It has been shown, that inhomogeneiry of the heterostructure after annealing with appropriate duration leads to simultaneously increasing of sharpness of p-n-junction and homogeneity of dopant distribution in doped area. Inhomogeneiry of temperature distribution leads to simultaneously increasing of both effects. Some conditions on properties of doped heterostructure and annealing time for simultaneously increasing of sharpness of p-n-junction and homogeneity of dopant distribution in doped area are formulated.