Decreasing of Depth of p-n-Junction in a Semiconductor Heterostructure by Serial Radiation Processing and Microwave Annealing

摘要

It has recently been shown, that manufacturing of diffusive-junction rectifiers and implanted-junction rectifiers in a semiconductor heterostructure after appropriate choosing of parameters of the structure and optimization of annealing time leads to increase of the sharpness of p-n-junction and at one time to increase the homogeneity of dopant distribution in doped area. Formation of inhomogeneity of temperature in the heterostructure by laser or microwave annealing gives us possibility to increase the both effects at one time. It has recently been shown by experiments, that pre-doping radiation processing of materials leads to changing of dopant diffusion in comparison with nonprocessed one. In this paper we consider the possibility to use serial radiation processing of materials of heterostructure before doping and microwave annealing of radiation defects after doping to increase the sharpness p-n-junctions and at one time to increase the homogeneity of dopant distribution in doped area in the heterostructure.