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Method for monitoring breakout of p-n-junctions in semiconductor components, involves integrating photosensitive electronic component in environment of p-n-junction being monitored in semiconductor component
Method for monitoring breakout of p-n-junctions in semiconductor components, involves integrating photosensitive electronic component in environment of p-n-junction being monitored in semiconductor component
The method involves integrating a photosensitive electronic component in an environment of a p-n-junction being monitored in the semiconductor component. Optical radiation is detected, which is emitted by p-n-junction in the latch of the breakout. A voltage applied on the p-n-junction or a current guided over the p-n-junction is regulated depending on the detected radiation. An independent claim is also included for a semiconductor component with a p-n-junction, a regulation unit and photosensitive electronic component.
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