首页> 外国专利> Method for monitoring breakout of p-n-junctions in semiconductor components, involves integrating photosensitive electronic component in environment of p-n-junction being monitored in semiconductor component

Method for monitoring breakout of p-n-junctions in semiconductor components, involves integrating photosensitive electronic component in environment of p-n-junction being monitored in semiconductor component

机译:用于监视半导体部件中的p-n结的破裂的方法,包括将光敏电子部件集成在被监视在半导体部件中的p-n结的环境中

摘要

The method involves integrating a photosensitive electronic component in an environment of a p-n-junction being monitored in the semiconductor component. Optical radiation is detected, which is emitted by p-n-junction in the latch of the breakout. A voltage applied on the p-n-junction or a current guided over the p-n-junction is regulated depending on the detected radiation. An independent claim is also included for a semiconductor component with a p-n-junction, a regulation unit and photosensitive electronic component.
机译:该方法包括将光敏电子部件集成在半导体部件中被监视的p-n结的环境中。检测到光辐射,该光辐射由分支的闩锁中的p-n结发出。取决于检测到的辐射来调节施加在p-n结上的电压或在p-n结上导引的电流。还包括具有p-n结的半导体组件,调节单元和光敏电子组件的独立权利要求。

著录项

  • 公开/公告号DE102007002820B3

    专利类型

  • 公开/公告日2008-06-26

    原文格式PDF

  • 申请/专利权人 UNIVERSITAET STUTTGART;

    申请/专利号DE20071002820

  • 发明设计人 MORSCHBACH MICHAEL;KASPER ERICH;

    申请日2007-01-19

  • 分类号H01L23/62;H02H9/00;

  • 国家 DE

  • 入库时间 2022-08-21 19:49:28

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