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POST-CMP CLEANING APPLICATIONS: CHALLENGES AND OPPORTUNITIES

机译:CMP后清洁应用程序:挑战和机遇

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CMP process detectivity and yield performance depends on effectiveness of the post-CMP (PCMP) cleaning process which should reduce roughness of the polished wafer and leave it defect-free, consistently removing, organic residues, and ionic contamination. This paper presents an overview of PCMP wafer cleaning attributes, trends, challenges and opportunities. PCMP cleaning effectiveness depends on the stability of brush PVA (Poly Vinyl Alcohol) properties, magnitude of brush-wafer frictional force, and the adhesion forces between the particle and wafer, and the particle and brush. Recently developed molded-through-the-core (MTTC) PVA roller brush design with an integral/disposable core provides positive anchoring and adhesion of PVA with the core and excellent dimensional stability, eliminating any possibility of PVA slippage at the core interface unlike slip-on-the-core (SOTC) brushes. Stable behavior of brush-wafer contact-pressure, contact-area, and dynamic-friction could be useful indicators of PCMP cleaning effectiveness and mechanical consistency of brushes over lifetime. Data from tribological studies using a new benchtop tribology tester developed for PVA brushes and a 200 mm wafer test tribometer (accelerated 48 hour tribological stress evaluation) are presented. In addition, results of comparative PCMP cleaning effectiveness fab evaluation of PVA brushes, involving MTTC and SOTC brushes, under brush break-in, scrub only and PCMP cleaning cycles, after Cu/Low-k barrier step CMP process in a 90 nm production fab using 200 mm wafers (blanket and 180 nm feature MIT854 patterned on Mirra Mesa tool) are also discussed. This study highlights the importance of PCMP clean brush design and methods of tribological and PCMP cleaning evaluations to ensure consistent frictiona! characteristics and wafer cleaning performance over brush lifetime, and demonstrates the benefits of using MTTC design PVA brushes in the Cu/low-k PCMP cleaning applications.
机译:CMP过程的检测能力和良率性能取决于CMP后(PCMP)清洁过程的有效性,该过程应减少抛光晶片的粗糙度并使其无缺陷,始终如一地去除,有机残留物和离子污染。本文概述了PCMP晶圆清洗的特性,趋势,挑战和机遇。 PCMP清洁效果取决于刷子的PVA(聚乙烯醇)性能的稳定性,刷子与晶片的摩擦力的大小以及颗粒与晶片,颗粒与刷子之间的附着力。最近开发的带有一体式/一次性型芯的模芯成型(MTTC)PVA辊刷设计提供了PVA与芯的可靠锚固和粘附力以及出色的尺寸稳定性,消除了PVA在芯界面上滑动的任何可能性,这与滑动核心(SOTC)画笔。电刷晶片接触压力,接触面积和动态摩擦的稳定行为可能是PCMP清洁效果和电刷在整个使用寿命中的机械一致性的有用指标。介绍了使用为PVA刷子开发的新型台式摩擦测试仪和200 mm晶圆测试摩擦仪(加速48小时摩擦应力评估)进行的摩擦研究数据。此外,在90 nm生产工厂中进行Cu / Low-k势垒步骤CMP处理之后,在PVA刷子(包括MTTC和SOTC刷子)的闯入,仅擦洗和PCMP清洁周期下,进行了PCMP清洁效果工厂评估的比较结果。还讨论了使用200毫米晶圆(在Mirra Mesa工具上图案化的毛毯和180纳米特征MIT854)的问题。这项研究强调了PCMP清洁刷设计,摩擦学和PCMP清洁评估方法的重要性,以确保始终如一的摩擦力!刷寿命内的特性和晶片清洁性能,并展示了在Cu / low-k PCMP清洁应用中使用MTTC设计的PVA刷子的好处。

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