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Post-CMP cleaning liquid, cleaning method and semiconductor wafer manufacturing method

机译:CMP后的清洗液,清洗方法及半导体晶片的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a cleaning liquid after CMP having excellent iron compound removing property and antibacterial property without dissolving tungsten. Further, the present invention provides a cleaning method having excellent iron compound removability without dissolving tungsten. SOLUTION: A CMP cleaning liquid containing a component (A): an antibacterial agent and a component (B): a carboxyl group-containing amine compound. A cleaning method for cleaning a semiconductor wafer using the cleaning liquid after CMP. A method for manufacturing a semiconductor wafer, which comprises a step of cleaning the semiconductor wafer with the cleaning liquid after CMP. [Selection diagram] None
机译:解决的问题:提供一种在CMP后具有优异的铁化合物去除性能和抗菌性能而又不溶解钨的清洁液。此外,本发明提供了一种在不溶解钨的情况下具有优异的铁化合物去除性的清洁方法。溶液:CMP清洁液,其中包含组分(A):抗菌剂和组分(B):含羧基的胺化合物。一种用于在CMP之后使用清洁液清洁半导体晶片的清洁方法。一种用于制造半导体晶片的方法,该方法包括以下步骤:在CMP之后,用清洗液清洗半导体晶片。 [选择图]无

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