Post-CMP cleaning liquid, cleaning method and semiconductor wafer manufacturing method
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机译:CMP后的清洗液,清洗方法及半导体晶片的制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a cleaning liquid after CMP having excellent iron compound removing property and antibacterial property without dissolving tungsten. Further, the present invention provides a cleaning method having excellent iron compound removability without dissolving tungsten. SOLUTION: A CMP cleaning liquid containing a component (A): an antibacterial agent and a component (B): a carboxyl group-containing amine compound. A cleaning method for cleaning a semiconductor wafer using the cleaning liquid after CMP. A method for manufacturing a semiconductor wafer, which comprises a step of cleaning the semiconductor wafer with the cleaning liquid after CMP. [Selection diagram] None
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