首页> 外文期刊>Applied Spectroscopy >Potential of Far-Ultraviolet Absorption Spectroscopy as a Highly Sensitive Analysis Method for Aqueous Solutions. Part II: Monitoring the Quality of Semiconductor Wafer Cleaning Solutions Using Attenuated Total Reflection
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Potential of Far-Ultraviolet Absorption Spectroscopy as a Highly Sensitive Analysis Method for Aqueous Solutions. Part II: Monitoring the Quality of Semiconductor Wafer Cleaning Solutions Using Attenuated Total Reflection

机译:远紫外吸收光谱作为水溶液的高灵敏度分析方法的潜力。第二部分:使用衰减全反射监测半导体晶圆清洗解决方案的质量

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Far-ultraviolet (FUV) spectroscopy combined with attenuated total reflection (ATR) is employed for direct measurement of the concentrations of semiconductor wafer cleaning fluids such as SC-1 (aqueous solution of NH3 and H2O2) and SC-2 (aqueous solution of HCl and H2O2). FUV spectra of these aqueous solutions in the 170–200 nm region are highly sensitive to changes in both hydrogen bonding and hydration. Although ATR measurement results in lower absorptivity compared to transmittance measurement, it is possible to increase absorption with greater evanescent wave penetration depth using a low refractive index internal reflection element (IRE). We adopt quartz as an IRE material. Since the refractive index of quartz becomes lower than that of water in the low energy side of an intense absorption band due to the n → σ* transition of water, the quartz IRE yields non-total reflection wavelength regions. However, near 175 nm the effective absorptivity of the tail of water's absorption band can be successfully enlarged, making the FUV-ATR technique suitable for measuring the concentrations of the components in the semiconductor wafer cleaning fluids. In the present study we prepared the same cleaning fluids as those used in actual semiconductor fabrication and measured their FUV-ATR spectra in the 150–300 nm wavelength range. It was found that even with the quartz IRE one can measure FUV-ATR spectra under total reflection conditions at 175 nm or above. We created calibration models for predicting both NH3 and H2O2 in the concentration ranges of 0–10% in SC-1 using multiple linear regression (MLR). The standard deviations of the models were 0.033% and 0.265% for NH3 and H2O2, respectively. The same procedure was repeated under the same conditions for HCl and H2O2 in SC-2, yielding corresponding values of 0.018% for HCl and 0.178% for H2O2.
机译:远紫外(FUV)光谱结合衰减全反射(ATR)用于直接测量半导体晶圆清洗液的浓度,例如SC-1(NH 3 和H 2 O 2 )和SC-2(HCl和H 2 O 2 的水溶液)。这些水溶液在170-200 nm范围内的FUV光谱对氢键和水合作用的变化高度敏感。尽管与透射率测量相比,ATR测量的吸收率较低,但使用低折射率内部反射元件(IRE)可以通过更大的e逝波穿透深度来增加吸收。我们采用石英作为IRE材料。由于水的n→σ*跃迁,石英在强吸收带的低能侧的折射率低于水的折射率,因此石英IRE产生非全反射波长区域。然而,在175 nm附近,水吸收带尾部的有效吸收率可以成功扩大,这使得FUV-ATR技术适合于测量半导体晶片清洗液中各组分的浓度。在本研究中,我们准备了与实际半导体制造中使用的清洗液相同的清洗液,并测量了其在150-300 nm波长范围内的FUV-ATR光谱。已发现即使使用石英IRE,也可以在175 nm或更高的全反射条件下测量FUV-ATR光谱。我们创建了用于预测SC-1中浓度范围为0–10%的NH 3 和H 2 O 2 的校准模型,线性回归(MLR)。 NH 3 和H 2 O 2 的模型标准偏差分别为0.033%和0.265%。在相同条件下,对SC-2中的HCl和H 2 O 2 重复相同的步骤,得出HCl的相应值为0.018%,H 2 O 2

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    《Applied Spectroscopy》 |2008年第9期|1022-1027|共6页
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